Company Filing History:
Years Active: 2000-2001
Title: Min-Seog Han: Innovator in DRAM Technology
Introduction
Min-Seog Han is a prominent inventor based in Kyunggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of DRAM (Dynamic Random Access Memory) cell capacitors. With a total of 2 patents to his name, Han's work has been instrumental in advancing memory storage solutions.
Latest Patents
Han's latest patents include innovative designs for DRAM cell capacitors. One of his patents describes a DRAM cell capacitor that features hemispherical grain (HSG) silicon on a selected portion of a storage node. This design resembles a solid cylindrical configuration, with HSG silicon applied only to the top portion and side wall, excluding the sloped top edge. Another patent focuses on a method for manufacturing a DRAM cell capacitor, which involves etching a conductive layer to create an angled shape at the top edge of the capacitor bottom electrode. This method enhances the capacitance of the capacitor, showcasing Han's expertise in semiconductor fabrication techniques.
Career Highlights
Min-Seog Han is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His role at Samsung has allowed him to work on cutting-edge technologies that shape the future of memory storage. Han's contributions have not only advanced the company's product offerings but have also set new standards in the industry.
Collaborations
Throughout his career, Han has collaborated with notable colleagues, including Ji-chul Shin and Seok Woo Nam. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Min-Seog Han's work in the field of DRAM technology exemplifies the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to enhancing memory storage solutions, making him a key figure in this vital area of technology.