The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Aug. 19, 1999
Applicant:
Inventors:
Min-Seog Han, Kyunggi-do, KR;
Ji-Chul Shin, Seoul, KR;
Seok Woo Nam, Seoul, KR;
Hyung-Seok Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ;
Abstract
A DRAM cell capacitor is provided, having HSG (hemispherical grain) silicon disposed on a selected portion of a storage node. The capacitor resembles a solid cylindrical configuration having a top portion, a side wall, and a top edge portion sloped downward from the top portion to the side wall. HSG silicon is disposed only on the top portion and the side wall, but not on the sloped top edge portion.