Dram cell capacitor and method for manufacturing the same

Abstract

A DRAM cell capacitor is provided wherein a capacitor bottom electrode has an HSG (Hemi-Spherical Grain) layer formed thereon so as to increase capacitance of the capacitor. In the DRAM cell capacitor, the capacitor bottom electrode has an angled shape at a top edge thereof, and the HSG silicon layer is not formed on the top edge of the capacitor bottom electrode. A method for manufacturing the DRAM cell capacitor comprises etching an upper portion of the conductive layer using the photoresist pattern as a mask, and at the same time forming a polymer on both sidewalls of the photoresist pattern to etch the upper portion thereof and thereby to make a top edge of the conductive layer be angled. The method further comprises etching a remaining portion of the conductive layer sing a combination of the photoresist pattern and the polymer as a mask until an upper surface of the interlayer insulating layer is exposed, to thereby form the capacitor bottom electrode.