Min-Nin Yu

Title: Min-Nin Yu: Innovator in Dielectric Layer Fabrication

Introduction

Min-Nin Yu is a prominent inventor based in Dajia, Taiwan. He is known for his significant contributions to the field of semiconductor technology, particularly in the fabrication of dielectric layers. His innovative methods aim to enhance the performance and reliability of electronic devices.

Latest Patents

Min-Nin Yu holds a patent for the "Fabrication of stacked dielectric layer for suppressing electrostatic charge buildup." This invention outlines a method for creating a stacked dielectric layer that effectively suppresses electrostatic charge accumulation. The process begins with providing a substrate that has metal layers, with gaps formed in between. A dielectric layer is then formed through simultaneous deposition and ion-bombardment, ensuring it covers the bottom dielectric liner and fills the gaps. Finally, a top dielectric liner is created on the dielectric layer through deposition without ion-bombardment. Additionally, the invention includes a method involving plasma treatment on the dielectric layer to further mitigate electrostatic charge buildup. These methods are designed to efficiently prevent metal extrusion issues.

Career Highlights

Min-Nin Yu is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to contribute to advancements in semiconductor fabrication techniques.

Collaborations

Min-Nin Yu has collaborated with notable colleagues, including Chai-Tak Teh and Gary Yang. Their combined expertise has fostered innovation in the field of semiconductor technology.

Conclusion

Min-Nin Yu's contributions to the fabrication of dielectric layers have made a significant impact on the semiconductor industry. His innovative methods not only enhance device performance but also address critical challenges in electrostatic charge management.