The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
May. 11, 2004
Chai-tak Teh, Luchou, TW;
Min-nin Yu, Dajia Township, Taichung County, TW;
Gary Yang, Jhubei, TW;
Han-chung Chen, Baoshan Township, Hsinchu County, TW;
Yuan-shin Jing, Longjing Township, Taichung County, TW;
Jian-liang Lin, Cihtong Township, Yunlin County, TW;
Jui-feng Jao, Toufen Township, Miaoli County, TW;
Chai-Tak Teh, Luchou, TW;
Min-Nin Yu, Dajia Township, Taichung County, TW;
Gary Yang, Jhubei, TW;
Han-Chung Chen, Baoshan Township, Hsinchu County, TW;
Yuan-Shin Jing, Longjing Township, Taichung County, TW;
Jian-Liang Lin, Cihtong Township, Yunlin County, TW;
Jui-Feng Jao, Toufen Township, Miaoli County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a stacked dielectric layer for suppressing electrostatic charge buildup. First, a substrate having metal layers thereon is provided, with a plurality of gaps formed therebetween. Next, a dielectric layer is formed by simultaneous deposition and ion-bombardment, such that the dielectric layer covers the bottom dielectric liner and fills the gaps. Finally, a top dielectric liner is formed on the dielectric layer by deposition without ion-bombardment. Furthermore, the present invention provides another method to fabricate a stacked dielectric layer by performing a plasma treatment on the dielectric layer to suppress electrostatic charge buildup. As a result, the above-mentioned methods can efficiently avoid metal extrusion issues.