Gwangju, South Korea

Min Hee Jeong

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Chonnam National University, Samsung Electronics Co., Ltd.. Active years: 2025.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Min Hee Jeong: Innovator in Semiconductor Technology

Introduction

Min Hee Jeong is a prominent inventor based in Gwangju, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to electrode structures.

Latest Patents

Min Hee Jeong holds a patent for an "Electrode structure including metal and heat dissipation layer and semiconductor including the electrode structure." This semiconductor device features a substrate with a first heat dissipation layer that extends in a specific direction. A metal layer is placed on this heat dissipation layer, and the design ensures that the width of the heat dissipation layer is greater than that of the metal layer in an intersecting direction. Notably, the heat dissipation layer is composed of carbon atoms and may include materials such as graphene, nanotubes, or a diamond structure. He has 1 patent to his name.

Career Highlights

Throughout his career, Min Hee Jeong has worked with notable organizations, including Samsung Electronics Co., Ltd. and Chonnam National University. His experience in these institutions has allowed him to develop and refine his expertise in semiconductor technologies.

Collaborations

Min Hee Jeong has collaborated with Hokyun Rho, contributing to advancements in their shared field of research.

Conclusion

Min Hee Jeong's innovative work in semiconductor technology highlights his role as a key inventor in the industry. His contributions continue to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…