The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jul. 27, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY, Gwangju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/48 (2006.01); H10B 12/00 (2023.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 21/4803 (2013.01); H10B 12/315 (2023.02); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract
A semiconductor device includes a substrate. A first heat dissipation layer is disposed on the substrate and extends in a first direction. A metal layer is disposed on the first heat dissipation layer and extends in the first direction. A width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction. The first heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.