Min-Hao Yang

Title: Min-Hao Yang: Innovator in Semiconductor Technology

Introduction

Min-Hao Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances the performance and efficiency of electronic components.

Latest Patents

Min-Hao Yang holds a patent for a semiconductor device and semiconductor component that includes a semiconductor stack and a first contact structure. This semiconductor device features an active layer with a first surface and a second surface. The first contact structure is located on the first surface and comprises a first semiconductor layer, a first metal element-containing structure, and a first p-type or n-type layer. Notably, the first p-type or n-type layer includes an oxygen element and a second metal element, with a thickness of less than or equal to 20 nm. The first semiconductor layer is composed of a phosphide compound or an arsenide compound. This innovative design aims to improve the functionality of semiconductor devices.

Career Highlights

Min-Hao Yang is currently employed at Epistar Corporation, a leading company in the semiconductor industry. His work at Epistar has allowed him to focus on advancing semiconductor technologies and contributing to the company's innovative projects.

Collaborations

Throughout his career, Min-Hao Yang has collaborated with notable colleagues, including Yu-Tsu Lee and Yi-Yang Chiu. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Min-Hao Yang is a distinguished inventor whose work in semiconductor technology has made a significant impact on the industry. His innovative patent and collaborations with talented colleagues highlight his commitment to advancing technology.