Epistar Corporation

Min-Hao Yang

Chun-Wei Chang

Yi-Ming Chen

Shih-Chang Lee

Yi-Yang Chiu

Chung-Hao Wang

Wei-Jen Hsueh

Yu-Tsu Lee

A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

Semiconductor device and semiconductor component including the same

Growing community of inventors

Hsinchu, Taiwan

Min-Hao Yang