The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Mar. 16, 2021
Epistar Corporation, Hsinchu, TW;
Yu-Tsu Lee, Hsinchu, TW;
Yi-Yang Chiu, Hsinchu, TW;
Chun-Wei Chang, Hsinchu, TW;
Min-Hao Yang, Hsinchu, TW;
Wei-Jen Hsueh, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Chung-Hao Wang, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.