Hsinchu, Taiwan

Chung-Hao Wang

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2024

where 'Filed Patents' based on already Granted Patents

3 patents (USPTO):

Title: Innovations of Chung-Hao Wang

Introduction

Chung-Hao Wang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative spirit and technical expertise.

Latest Patents

One of his latest patents is for a semiconductor device and semiconductor component, which includes a semiconductor stack and a first contact structure. This device features an active layer with a first surface and a second surface. The first contact structure is located on the first surface and comprises a first semiconductor layer, a first metal element-containing structure, and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element, while the first p-type or n-type layer physically contacts both the first semiconductor layer and the first metal element-containing structure. Notably, this layer includes an oxygen element and a second metal element, with a thickness of less than or equal to 20 nm. The first semiconductor layer is made from a phosphide compound or an arsenide compound.

Another significant patent by Wang is for a light-emitting device. This optoelectronic semiconductor device consists of a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure, and a contact structure. The first type semiconductor structure is situated on the substrate and features a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is positioned on the first type semiconductor structure. The active structure is located between the two semiconductor structures, while the contact structure is placed between the first type semiconductor structure and the substrate. The second thickness of the platform part ranges from 0.01 μm to 1 μm.

Career Highlights

Chung-Hao Wang is currently associated with Epistar Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

Wang has collaborated with notable colleagues, including Yi-Ming Chen and Yi-Yang Chiu, contributing to a dynamic and innovative work environment.

Conclusion

Chung-Hao Wang's contributions to semiconductor technology through his patents reflect his dedication to innovation and excellence in the field. His work continues to influence the development of advanced electronic devices.

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