Miyagi, Japan

Mikio Yamamoto

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mikio Yamamoto. Retrieved from https://idiyas.com/inventor/mikio-yamamoto-tb2dnqjo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Mikio Yamamoto: Innovator in Etching Technology

Introduction

Mikio Yamamoto is a prominent inventor based in Miyagi, Japan. He is known for his contributions to the field of semiconductor technology, particularly in etching methods that enhance the manufacturing process of semiconductor devices.

Latest Patents

Yamamoto holds a patent for an innovative etching method. This method involves etching a substrate by plasma through a mask with a predetermined pattern located at the back of a silicon layer of the substrate. The process includes a main etching step where plasma is generated by supplying a process gas that consists of a mixed gas with a specific flow ratio of fluorine compound gas, oxygen gas, and silicon fluoride gas. The substrate is then etched by the plasma, followed by an over etching step that further etches the substrate while applying a high frequency for bias.

Career Highlights

Mikio Yamamoto has made significant strides in his career, particularly through his work at Tokyo Electron Limited. His expertise in etching technology has positioned him as a key player in the semiconductor industry.

Collaborations

Yamamoto has collaborated with Koji Maruyama, contributing to advancements in etching methods and semiconductor device fabrication.

Conclusion

Mikio Yamamoto's innovative work in etching technology has made a lasting impact on the semiconductor industry. His patent and contributions continue to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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