Mikhail Sergeyevich Kryvokorytov

Title: Mikhail Sergeyevich Kryvokorytov: Innovator in EUV Light Source Technology

Introduction

Mikhail Sergeyevich Kryvokorytov is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of extreme ultraviolet (EUV) lithography, particularly through his innovative patent for a high-brightness LPP EUV light source. His work is essential for advancing EUV metrology and actinic inspection of lithography masks.

Latest Patents

Kryvokorytov holds a patent for a high-brightness LPP EUV light source. This invention provides a method and apparatus for a commercially viable EUV light source. The technology utilizes a laser target in the form of a continuous jet of liquid lithium, which is circulated in a closed-loop system by a high-temperature pump. The collector mirror is strategically placed outside the vacuum chamber, filled with an inert gas, and the EUV output is directed through a spectral purity filter. This filter is configured as an EUV exit window for the vacuum chamber. Additionally, the input window for the laser beam is coated with a screening optical element, and evaporative cleaning of the EUV spectral purity filter is implemented.

Career Highlights

Throughout his career, Kryvokorytov has worked with various companies, including Isteq B.V. and Rnd-Isan Ltd. His experience in these organizations has contributed to his expertise in the field of EUV technology.

Collaborations

Kryvokorytov has collaborated with notable colleagues such as Pavel Stanislavovich Antsiferov and Aleksandr Yurievich Vinokhodov. Their joint efforts have furthered advancements in the technology surrounding EUV light sources.

Conclusion

Mikhail Sergeyevich Kryvokorytov is a prominent figure in the field of EUV technology, with a patent that showcases his innovative approach to creating high-brightness light sources. His contributions are vital for the future of lithography and metrology in the semiconductor industry.