The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Jun. 14, 2016
Isteq B.v., Eindhoven, NL;
Pavel Stanislavovich Antsiferov, Troitsk, RU;
Aleksandr Yurievich Vinokhodov, Troitsk, RU;
Vladimir Vitalievich Ivanov, Moscow, RU;
Konstantin Nikolaevich Koshelev, Troitsk, RU;
Mikhail Sergeyevich Kryvokorytov, Moscow, RU;
Vladimir Mikhailovich Krivtsun, Troitsk, RU;
Aleksandr Andreevich Lash, Moscow, RU;
Vyacheslav Valerievich Medvedev, Troitsk, RU;
Yury Viktorovich Sidelnikov, Troitsk, RU;
Oleg Feliksovich Yakushev, Korolyev, RU;
Denis Alexandrovich Glushkov, Nieuwegein, NL;
Samir Ellwi, West Sussex, GB;
Pavel Viktorovich Seroglazov, Veldhoven, NL;
OOO “Isteq B.V.”, Eindhoven, NL;
Abstract
The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means of a high temperature pump. The collector mirror is placed outside the vacuum chamber in an environment filled with an inert gas and EUV output to a collector mirror is provided through the spectral purity filter, configured as an EUV exit window for the vacuum chamber. In the vacuum chamber, the input window for the laser beam is coated with a screening optical element. Evaporative cleaning of the EUV spectral purity filter and the screening optical element is provided. The protective shield with a temperature higher than 180° C. may be adjusted around the target jet.