Mike L Kempel

Title: Mike L Kempel: Innovator in Semiconductor Doping Technology

Introduction

Mike L Kempel is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of doping semiconductor materials. His innovative methods have the potential to enhance the efficiency and performance of semiconductor devices.

Latest Patents

Mike L Kempel holds a patent for a "Method for doping semiconductor materials." This method provides a way to control the concentration of a dopant introduced into an epitaxial film during chemical vapor deposition (CVD) or sublimation growth. The technique involves controlling the energy of dopant atoms impinging on the film using a supersonic beam. Additionally, precursor materials can also be introduced via the supersonic beam. The energy of the dopant atoms can be adjusted by modifying flow conditions in the supersonic beam or by changing carrier gases. The flow can be continuous or pulsed, with examples provided for silicon carbide doping.

Career Highlights

Mike L Kempel is associated with Extreme Devices Incorporated, where he applies his expertise in semiconductor technology. His work at the company has allowed him to develop and refine his innovative methods for doping semiconductor materials.

Collaborations

Mike collaborates with Keith D Jamison, who is also involved in the semiconductor field. Their partnership contributes to the advancement of technologies that can impact various applications in electronics.

Conclusion

Mike L Kempel's contributions to semiconductor doping technology exemplify the importance of innovation in the field. His patented methods are paving the way for advancements in semiconductor efficiency and performance.