The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2000
Filed:
Jun. 26, 1998
Applicant:
Inventors:
Keith D Jamison, Austin, TX (US);
Mike L Kempel, Austin, TX (US);
Assignee:
Extreme Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117-2 ; 438510 ; 117105 ; 117971 ;
Abstract
Method is provided for controlling the concentration of a dopant introduced into an epitaxial film during CVD or sublimation growth by controlling the energy of dopant atoms impinging on the film in a supersonic beam. Precursor materials may also be introduced by supersonic beam. Energy of the dopant atoms may be changed by changing flow conditions in the supersonic beam or changing carrier gases. Flow may be continuous or pulsed. Examples of silicon carbide doping are provided.