Suwon, South Korea

Mihyun Park

This inventor holds 2 USPTO granted patents and 7 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mihyun Park. Retrieved from https://idiyas.com/inventor/mihyun-park-pmyxb2iu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Mihyun Park: Innovator in Semiconductor Technology

Introduction

Mihyun Park is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique etching composition that is essential for manufacturing semiconductor devices.

Latest Patents

Mihyun Park holds a patent for an etching composition, which includes an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator. This patent also covers a method of etching metal-containing films using this composition, as well as a method for preparing semiconductor devices. His invention plays a crucial role in enhancing the efficiency and effectiveness of semiconductor manufacturing processes.

Career Highlights

Mihyun Park is currently employed at Samsung Electronics Ltd., a leading company in the technology sector. His work at Samsung has allowed him to collaborate with some of the brightest minds in the industry, further advancing his expertise in semiconductor technology.

Collaborations

Due to space constraints, the details of Mihyun Park's collaborations will not be included.

Conclusion

Mihyun Park's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to impact the industry positively, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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