Location History:
- Nagoya, JP (1984)
- Yachimata, JP (1989 - 1993)
- Chiba, JP (1993 - 1994)
- Sanbumachi, JP (1996)
- Chiba-ken, JP (1998)
Company Filing History:
9 out of 85 
5 out of 17,606 
Years Active: 1984-1998
Title: Michio Ishikawa: Innovator in Semiconductor Passivation Technology
Introduction
Michio Ishikawa is a prolific inventor hailing from Yachimata, Japan, with a remarkable portfolio of 12 patents. His work primarily focuses on advancements in passivation films for semiconductor applications, which are critical for enhancing the durability and performance of electronic devices.
Latest Patents
Among his latest inventions is a novel method for forming a SiO₂ passivation film on plastic substrates. This innovative technique employs a plasma chemical vapor deposition (CVD) process that utilizes organic oxysilane as the raw gas. Through this method, inert gases such as Argon (Ar), Helium (He), or ammonia (NH₃) are used instead of more reactive gases that could cause ashing effects. This adaptation significantly reduces the risk of thermal deformation of the plastic substrate while ensuring that ashing by oxygen or hydrogen radicals is prevented. Furthermore, Ishikawa also introduced a method to form a passivation film where fluorine group gases, CF₄ or NF₃, can be incorporated to enhance the reactive gas mixture, optimizing the film's properties even further.
Career Highlights
Ishikawa has contributed to significant advancements in the field during his tenure with renowned companies, including Nihon Shinku Gijutsu Kabushiki Kaisha and Brother Industries, Ltd. His deep expertise in material science and engineering has led to the development of breakthrough technologies that address the challenges faced in semiconductor manufacturing processes.
Collaborations
Throughout his career, Ishikawa has collaborated with notable colleagues such as Kyuzo Nakamura and Noriaki Tani. Their combined efforts in research and development have fostered innovative solutions that push the boundaries of current semiconductor technology, further establishing Ishikawa’s reputation as a leading inventor in this domain.
Conclusion
Michio Ishikawa's contributions to the field of semiconductor technology through his patents and collaborative efforts exemplify the spirit of innovation. His unique methods for forming passivation films have not only improved the performance of electronic devices but have also paved the way for future advancements in materials engineering. With a strong track record of invention, Ishikawa continues to inspire future generations of inventors and researchers in the field.