The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Jun. 11, 1996
Kazuyuki Ito, Chiba-ken, JP;
Kyuzo Nakamura, Chiba-ken, JP;
Michio Ishikawa, Chiba-ken, JP;
Jun Togawa, Chiba-ken, JP;
Noriaki Tani, Chiba-ken, JP;
Masanori Hashimoto, Chiba-ken, JP;
Yumiko Ohashi, Nagoya, JP;
Nihon Shinku Gijutsu Kabushiki Kaisha, Kanagawa-ken, JP;
Brother Kogyo Kabushiki Kaisha, Aichi-ken, JP;
Abstract
An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.