Jun Togawa

Title: Jun Togawa: Innovator in Passivation Film Technology

Introduction

Jun Togawa is a notable inventor based in Sanbumachi, Japan. She has made significant contributions to the field of materials science, particularly in the development of passivation films for plastic substrates. With a total of two patents to her name, her work has implications for various industries, including electronics and materials engineering.

Latest Patents

Togawa's latest patents focus on methods for forming SiO₂ passivation films on plastic substrates. The first patent describes a process where an SiO₂ passivation film is created using a plasma chemical vapor deposition (CVD) method. In this process, organic oxysilane serves as the raw gas, while inert gases such as Argon (Ar), Helium (He), or Ammonia (NH₃) are utilized to assist in the decomposition of the raw gas at temperatures below 250°C. This innovative approach prevents the ashing of the substrate by reactive radicals. The second patent outlines a similar method for forming a passivation film, emphasizing the use of organic oxysilane and the addition of fluorine group gases like CF₄ or NF₃ to enhance the process.

Career Highlights

Throughout her career, Jun Togawa has worked with prominent companies, including Nihon Shinku Gijutsu and Brother Industries, Ltd. Her experience in these organizations has allowed her to refine her expertise in passivation film technology and contribute to advancements in the field.

Collaborations

Togawa has collaborated with notable colleagues, including Kazuyuki Ito and Kyuzo Nakamura. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Jun Togawa's contributions to the field of passivation film technology highlight her role as a pioneering inventor. Her innovative methods and collaborative efforts continue to influence advancements in materials science.