The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Sep. 27, 1994
Kazuyuki Ito, Sanbumachi, JP;
Kyuzo Nakamura, Sanbumachi, JP;
Michio Ishikawa, Sanbumachi, JP;
Jun Togawa, Sanbumachi, JP;
Noriaki Tani, Sanbumachi, JP;
Masanori Hashimoto, Sanbumachi, JP;
Yumiko Ohashi, Nagoya, JP;
Nihon Shinku Gijutsu Kabushiki Kaisha, Chigasaki, JP;
Brother Kogyo Kabushiki Kaisha, Nagoya, JP;
Abstract
A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.