This inventor holds 3 USPTO granted patents. Top assignee: Toshiba Ceramics Co., Ltd.. Active years: 1989-1990.
Company Filing History:
Years Active: 1989-1990
Title: Michihiro Ohwa: Innovator in Silicon Wafer Technology
Introduction
Michihiro Ohwa is a notable inventor based in Kunitachi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon wafers. With a total of 3 patents to his name, Ohwa's work has had a lasting impact on the industry.
Latest Patents
Ohwa's latest patents include innovative methods for enhancing silicon wafer production. One of his key inventions is the "Neutron transmutation doping of a silicon wafer." This patent describes a method of doping phosphor into single silicon crystals by transmuting the isotope Si.sup.30 into p.sup.31 under neutron irradiation. This process significantly improves the quality and performance of silicon wafers. Another important patent is the "Method of and device for growing single crystals." This invention features a device that utilizes a pair of electromagnetic coils symmetrically positioned around a crucible, enhancing the efficiency of single crystal growth.
Career Highlights
Ohwa is currently employed at Toshiba Ceramics Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work at Toshiba has allowed him to collaborate with other talented professionals and contribute to cutting-edge advancements in the industry.
Collaborations
Some of his notable coworkers include Kazumoto Homma and Eiichi Toji. Their collaborative efforts have further propelled advancements in semiconductor technologies.
Conclusion
Michihiro Ohwa's contributions to silicon wafer technology exemplify the spirit of innovation in the semiconductor industry. His patents and ongoing work continue to influence the field and inspire future advancements.