The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1990
Filed:
Dec. 22, 1987
Applicant:
Inventors:
Shin'ichiro Takasu, Tokyo, JP;
Michihiro Ohwa, Kunitachi, JP;
Kazuhiko Kashima, Yokohama, JP;
Eiichi Toji, Machida, JP;
Kazumoto Homma, Sagamihara, JP;
Assignee:
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 17 ; 437 16 ; 437 15 ; 357 91 ; 148D / ; 376158 ; 376183 ; 376156 ;
Abstract
A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si.sup.30 contained in said single silicon crystals made by the CZ method or the MCZ method into p.sup.31 under neutron irradiation to said single silicon crystals.