Gloucester, Canada

Michel Maurice Dion

This inventor holds 3 USPTO granted patents. Top assignees: National Research Council of Canada, Sige Semiconductor, Inc.. Active years: 1994-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Michel Maurice Dion. Retrieved from https://idiyas.com/inventor/michel-maurice-dion

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1994-2006

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3 patents (USPTO):Explore Patents

Title: Michel Maurice Dion: Innovator in Semiconductor Technologies

Introduction

Michel Maurice Dion is a notable inventor based in Gloucester, CA. He has made significant contributions to the field of semiconductor technologies, holding a total of 3 patents. His work focuses on enhancing the quality and efficiency of semiconductor materials and devices.

Latest Patents

One of his latest patents is a method of depositing high-quality SiGe on SiGe substrates. This invention provides a method of depositing high-quality Si or SiGe epitaxial layers on SiGe substrates. By first depositing a thin Si seed layer on the SiGe substrate, the quality of the seed layer and of the subsequently deposited layers is greatly improved over what is obtained from depositing SiGe directly onto the SiGe substrate. Indeed, whereas the RMS surface roughness of the deposition of SiGe directly on SiGe, as measured by atomic-force microscopy (AFM), was 3–4 nm, it was more than an order of magnitude better when a thin Si seed layer was employed. This work was performed on an ultra-high-vacuum chemical vapor deposition (UHV/CVD) system; however, the same method would apply to other deposition systems such as atmospheric-pressure, low-pressure, and rapid-thermal CVD.

Another significant patent involves second-harmonic generation in semiconductor heterostructures. Quasi-phase matched (QPM) second-harmonic (SH) generation in the reflection geometry is described. The SH intensity can be strongly enhanced by spatially modulating the optical properties of the nonlinear medium. This type of quasi-phase matching is demonstrated using an Al.sub.0.8 Ga.sub.0.2 As/GaAs heterostructure designed for .lambda.=1.06 .mu.m incident light. The SH light intensity generated in reflection from the heterostructure is enhanced 70 times relative to the SH response of a homogeneous GaAs wafer. A Fabry-Perot resonant cavity design employs this structure to make thin films with extremely high SH generation efficiencies. This is of particular interest used in vertical cavity surface emitting lasers (VCSELs).

Career Highlights

Throughout his career, Michel has worked with esteemed organizations such as the National Research Council of Canada and Sige Semiconductor, Inc. His innovative approaches have led to advancements in semiconductor technology, making him a respected figure in the field.

Collaborations

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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