The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1995
Filed:
Jun. 28, 1993
Siegfried Janz, Ottawa, CA;
Hongxing Dai, Gloucester, CA;
Francoise Chatenoud, Ottawa, CA;
Michel Dion, Gloucester, CA;
Richard Normandin, Ottawa, CA;
Chan Fernando, Gloucester, CA;
National Research Council of Canada, Ottawa, CA;
Abstract
Quasi-phase matched (QPM) second-harmonic (SH) generation in the reflection geometry is described. The SH intensity can be strongly enhanced by spatially modulating the optical properties of the nonlinear medium. This type of quasi-phase matching is demonstrated using an Al.sub.0.8 Ga.sub.0.2 As/GaAs heterostructure designed for .lambda.=1.06 .mu.m incident light. The SH light intensity generated in reflection from the heterostructure is enhanced 70 times relative to the SH response of a homogeneous GaAs wafer. A Fabry-Perot resonant cavity design employs this structure to make thin films with extremely high SH generation efficiencies. This is of particular interest used in vertical cavity surface emitting lasers (VCSELs).