This inventor holds 3 USPTO granted patents. Top assignee: National Research Council of Canada. Active years: 1994-1995.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1994-1995
Title: Innovations of Hongxing Dai in Semiconductor Technology
Introduction
Hongxing Dai is a prominent inventor based in Gloucester, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the efficiency of optical processes in semiconductor materials.
Latest Patents
One of his latest patents involves second-harmonic generation in semiconductor heterostructures. This patent describes quasi-phase matched (QPM) second-harmonic (SH) generation in reflection geometry. The SH intensity can be significantly enhanced by spatially modulating the optical properties of the nonlinear medium. This type of quasi-phase matching is demonstrated using an Al.sub.0.8 Ga.sub.0.2 As/GaAs heterostructure designed for .lambda.=1.06 .mu.m incident light. The SH light intensity generated in reflection from the heterostructure is enhanced 70 times relative to the SH response of a homogeneous GaAs wafer. A Fabry-Perot resonant cavity design employs this structure to create thin films with extremely high SH generation efficiencies, which is particularly relevant for vertical cavity surface emitting lasers (VCSELs).
Another notable patent by Hongxing Dai involves coherent phase and frequency detection using sum-frequency mixing. In this invention, a plurality of signals are mixed in a non-linear waveguide to generate a near-field sum frequency output pattern. The near-field output pattern is monitored for changes that correspond to variations in the phase relationship between the input signals. A grating provides a mask through which the near-field pattern may propagate, and detectors positioned above the grating measure the intensity of the near-field pattern. Changes in the intensity of the near-field output pattern indicate variations in the phase relationship between the input signals.
Career Highlights
Hongxing Dai is associated with the National Research Council of Canada, where he continues to advance research in semiconductor technologies. His innovative work has garnered attention in the scientific community, contributing to the development of more efficient optical devices.
Collaborations
He has collaborated with notable colleagues such as Siegfried Janz and Richard J Normandin, further enhancing the impact of his research through teamwork and shared expertise.
Conclusion
Hongxing Dai's contributions to semiconductor technology through his patents and research are noteworthy. His innovative approaches to enhancing optical processes have the potential to significantly impact various applications in
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile