Michael Mee Gouh Tiong

Title: Michael Mee Gouh Tiong: Innovator in Semiconductor Technology

Introduction

Michael Mee Gouh Tiong is a notable inventor based in Kuching, Malaysia. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs in transistor structures. His work has implications for improving the efficiency and performance of electronic devices.

Latest Patents

Michael Mee Gouh Tiong holds a patent for a Metal Oxide Semiconductor (MOS) transistor. This invention includes a source, a gate, and a drain, all located within a well structure of a first doping polarity on a substrate. Notably, at least one of the source and the drain features a first structure that comprises a first region forming a drift region, which is of a second doping polarity opposite to the first. The design also includes a second region with a higher doping concentration than the first region, which contributes to a lower ON resistance compared to similar transistors lacking this second region. The breakdown voltage is minimally affected by this design.

Career Highlights

Michael is currently employed at X-Fab Semiconductor Foundries AG, where he continues to advance his research and development in semiconductor technologies. His work at X-Fab has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of his notable coworkers include Yong Hai Hu and Elizabeth Ching Tee Kho. Their collective expertise contributes to the innovative environment at X-Fab Semiconductor Foundries AG.

Conclusion

Michael Mee Gouh Tiong is a prominent figure in the semiconductor industry, with a focus on enhancing transistor technology. His contributions are paving the way for more efficient electronic devices, showcasing the importance of innovation in this field.