The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Feb. 12, 2009
Elizabeth Ching Tee Kho, Kuching, MY;
Zheng Chao Liu, Shanghai, CN;
Deb Kumar Pal, Kolkata, IN;
Michael Mee Gouh Tiong, Kuching, MY;
Jian Liu, Shanghai, CN;
Kia Yaw Kee, Kuching, MY;
Yong Hai Hu, Singapore, SG;
Elizabeth Ching Tee Kho, Kuching, MY;
Zheng Chao Liu, Shanghai, CN;
Deb Kumar Pal, Kolkata, IN;
Michael Mee Gouh Tiong, Kuching, MY;
Jian Liu, Shanghai, CN;
Kia Yaw Kee, Kuching, MY;
William Lau, Kuching, MY;
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Abstract
A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent.