William Lau

Title: William Lau - Innovator in Semiconductor Technology

Introduction

William Lau is a notable inventor based in Kuching, Malaysia. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs in transistor structures. His work has implications for improving the efficiency and performance of electronic devices.

Latest Patents

William Lau holds a patent for a Metal Oxide Semiconductor (MOS) transistor. This invention comprises a source, a gate, and a drain, all located in or on a well structure of a first doping polarity situated on a substrate. Notably, at least one of the source and the drain includes a first structure that features a first region forming a drift region of a second doping polarity, which is opposite to the first. The design includes a second region with a higher doping concentration than the first region, which contributes to a lower ON resistance compared to similar transistors lacking this second region. The breakdown voltage is minimally affected by this design.

Career Highlights

William Lau is currently employed at X-Fab Semiconductor Foundries AG, where he continues to advance semiconductor technology. His work at X-Fab has allowed him to collaborate with other talented professionals in the field, enhancing the company's innovative capabilities.

Collaborations

Some of his notable coworkers include Yong Hai Hu and Elizabeth Ching Tee Kho. Their collective expertise contributes to the ongoing success and innovation at X-Fab Semiconductor Foundries AG.

Conclusion

William Lau's contributions to semiconductor technology, particularly through his patented MOS transistor design, highlight his role as an influential inventor in the industry. His work not only enhances the performance of electronic devices but also showcases the importance of innovation in technology.