Saco, ME, United States of America

Michael M Dube


Average Co-Inventor Count = 8.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: Michael M Dube: Innovator in Semiconductor Packaging

Introduction

Michael M Dube is a notable inventor based in Saco, Maine, who has made significant contributions to the field of semiconductor packaging. With a total of two patents to his name, Dube's work focuses on improving the efficiency and functionality of semiconductor devices.

Latest Patents

Dube's latest patents include a package that integrates a semiconductor die with a capacitive component. This innovative method involves forming a redistribution layer on a substrate through a first electroplating process, followed by the creation of a conductive pillar on the redistribution layer using a second electroplating process. The process culminates in coupling a semiconductor die to the redistribution layer and forming a molding layer that encapsulates both the redistribution layer and the conductive pillar. Another patent relates to an improved package that also includes a semiconductor die, utilizing similar methods to enhance the overall design and functionality.

Career Highlights

Michael M Dube is currently employed at Fairchild Semiconductor Corporation, where he continues to develop cutting-edge technologies in semiconductor packaging. His expertise in electroplating processes and semiconductor integration has positioned him as a valuable asset in the industry.

Collaborations

Dube has collaborated with notable colleagues such as Ahmad Ashrafzadeh and Vijay Ullal, contributing to advancements in semiconductor technology through teamwork and shared expertise.

Conclusion

Michael M Dube's innovative work in semiconductor packaging exemplifies the importance of continuous improvement in technology. His patents reflect a commitment to enhancing the efficiency and effectiveness of semiconductor devices, making a lasting impact in the field.

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