Cork City, Ireland

Michael L Korwin-Pawlowski


Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1997

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2 patents (USPTO):Explore Patents

Title: Michael L Korwin-Pawlowski: Innovator in Semiconductor Technology

Introduction

Michael L Korwin-Pawlowski is a notable inventor based in Cork City, Ireland. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to device design.

Latest Patents

His latest patents include a "Planar P-N Junction Semiconductor Structure with Multilayer Passivation" and a "Mesa Semiconductor Structure." The planar p-n junction patent describes a semiconductor device featuring a silicon body with at least one planar p-n junction that intersects the surface. This device utilizes a multilayer arrangement for passivation, which includes thermally grown silicon dioxide, chemical-vapor-deposited silicon nitride, oxygen-rich polysilicon, and additional layers of silicon dioxide. The mesa semiconductor structure patent focuses on improving the mechanical properties of mesa diodes by incorporating a central depression in the chip regions before the diffusion step that forms the rectifying junction.

Career Highlights

Michael is currently employed at General Instrument Corporation of Delaware, where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Throughout his career, Michael has collaborated with esteemed colleagues such as Jean-Michel Guillot and James J Brogle. These partnerships have contributed to the successful development of innovative technologies in the semiconductor field.

Conclusion

Michael L Korwin-Pawlowski is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His patents reflect a deep understanding of materials and device structures, positioning him as a key figure in the field.

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