The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1997
Filed:
May. 14, 1996
Applicant:
Inventors:
Michael L Korwin-Pawlowski, Cork City, IE;
Jean-Michel Guillot, Cloyne, IE;
James J Brogle, Cork City, IE;
Assignee:
General Instrument Corporation of Delaware, Hatboro, PA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257490 ; 257494 ; 257495 ; 257636 ; 257640 ; 437233 ; 437239 ; 437244 ;
Abstract
A semiconductor device, which has a silicon body that includes at least one planar p-n junction that intersects a surface of the body, uses a multilayer arrangement that includes a first layer of thermally grown silicon dioxide, a second layer of Chemical-Vapor-Deposited (CVD) silicon nitride, a third layer of CVD oxygen-rich polysilicon, and a fourth layer of CVD silicon dioxide to passivate the junction. Common metallization contacts both the diffused region of the planar junction and the oxygen-rich polysilicon.