Michael J Sheehan

Title: Michael J Sheehan: Innovator in Read Only Memory Technology

Introduction

Michael J Sheehan is a notable inventor based in Rochester, MN (US). He has made significant contributions to the field of memory technology, particularly with his innovative work on read only memory systems. His expertise and creativity have led to advancements that enhance the efficiency and functionality of memory arrays.

Latest Patents

Michael J Sheehan holds 1 patent for his invention related to read only memory. His patent describes an FET read only memory array that features bit locations arranged in rows and columns. This design utilizes a dynamic array and static sensing to improve memory access and reliability. The invention allows for a dynamic first address to select the gate line of a chosen column, while a second address selects the source line or lines to access one or more bits within that column. The presence or absence of a gate at a selected bit location determines the logic level present at the sense or drain line serving that bit location. Additionally, the design includes a column of FET bit positions, each equipped with a gate, which is activated towards the end of the cycle to eliminate any charge on a sense line in preparation for the next cycle. The sensed output from a selected bit location is latched until a reset occurs.

Career Highlights

Michael J Sheehan is associated with the International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to collaborate with other talented professionals in the field of technology and innovation.

Collaborations

Some of his notable coworkers include Dale Arthur Heuer and John F Roemer. Their collective efforts contribute to the advancement of technology and innovation within the company.

Conclusion

Michael J Sheehan's contributions to read only memory technology exemplify the impact of innovative thinking in the tech industry. His patent and work at IBM highlight the importance of collaboration and creativity in driving advancements in memory systems.