Michael G Lincoln

Title: Michael G Lincoln: Innovator in High Frequency Bipolar Transistors

Introduction

Michael G Lincoln is a notable inventor based in Mesa, AZ (US). He has made significant contributions to the field of electronics, particularly in the development of high frequency bipolar transistors. His innovative work has led to advancements that enhance the performance of electronic devices.

Latest Patents

Lincoln holds a patent for a high frequency bipolar transistor and method of forming the same. This invention features a high frequency bipolar transistor with reduced capacitance and inductance, formed over a heavily doped substrate to create a low resistance current path. The design includes a lightly doped epitaxial layer that isolates the substrate from the transistor layers, ensuring optimal performance. The topside substrate contact couples the emitter of the transistor to the substrate, while the backside is metalized to eliminate wirebond inductance.

Career Highlights

Michael G Lincoln is associated with Motorola Corporation, where he has contributed to various projects and innovations. His work has been instrumental in advancing the technology behind high frequency transistors, which are crucial for modern electronic applications.

Collaborations

Throughout his career, Lincoln has collaborated with notable colleagues, including Kurt K Sakamoto and Peter J Zdebel. These partnerships have fostered a creative environment that has led to significant technological advancements.

Conclusion

Michael G Lincoln's contributions to the field of high frequency bipolar transistors exemplify his innovative spirit and dedication to advancing technology. His patent and work at Motorola Corporation highlight his role as a key figure in the electronics industry.