The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Nov. 04, 1997
Kurt K Sakamoto, Chandler, AZ (US);
Peter J Zdebel, Mesa, AZ (US);
Michael G Lincoln, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A high frequency bipolar transistor (30, 60) having reduced capacitance and inductance is formed over a substrate (61). The substrate (61) is heavily doped to form a low resistance current path. A lightly doped epitaxial layer (62) isolates the substrate (61) from layers which form the transistor. The epitaxial layer (62) is the same conductivity type as the substrate (61). A topside substrate contact (73) couples an emitter of the transistor (60) to the substrate (61). The backside of the substrate (61) is metalized and conductively attached to a leaded flag of a leadframe (51) thereby eliminating wirebond inductance in the emitter of the transistor.