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For the Inventor, By the Inventor

Danbury, CT, United States of America

Michael A Tischler

This inventor holds 14 USPTO granted patents and 5 published patent applications and 4 EPO patents, primarily in Semiconductor Devices. Top assignees: Advanced Technology Materials, Inc., International Business Machines Corporation, Other. Active years: 1991-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Michael A Tischler. Retrieved from https://idiyas.com/inventor/michael-a-tischler

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.8

ph-index = 10

Forward Citations = 1,107(Granted Patents)


Location History:

  • Jefferson Valley, NY (US) (1991)
  • Croton-on-Hudson, NY (US) (1992)
  • Danbury, CT (US) (1995 - 1999)
  • Phoenix, AZ (US) (1999 - 2001)

Company Filing History:

goldMedal8 out of 622 
 
Advanced Technology Materials, Inc.
 patents
silverMedal5 out of 166,425 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 834,601 
Other
 patents

Years Active: 1991-2001

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Areas of Expertise:
Silicon Carbide
GaN-based Devices
Epitaxial Layers
Electroluminescent Device
Heterostructure Devices
Fluid Storage
Low Voltage Memory
Group III-V Semiconductors
Ohmic Contacts
Single Crystal Growth
14 patents (USPTO):Explore Patents
1. 6329088 - Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00> (2001-12-11),
2. 6156581 - GaN-based devices using (Ga, AL, In)N base layers (2000-12-05),
3. 6019823 - Sorbent-based fluid storage and dispensing vessel with replaceable (2000-02-01),
4. 5980265 - Low resistance, stable ohmic contacts to silicon carbide, and method of (1999-11-09),
5. 5874747 - High brightness electroluminescent device emitting in the green to (1999-02-23),
6. 5679152 - Method of making a single crystals Ga*N article (1997-10-21),
7. 5661074 - High brightness electroluminescent device emitting in the green to (1997-08-26),
8. 5585648 - High brightness electroluminescent device, emitting in the green to (1996-12-17),
9. 5508543 - Low voltage memory (1996-04-16),
10. 5442200 - Low resistance, stable ohmic contacts to silcon carbide, and method of (1995-08-15),
11. 5162891 - Group III-V heterostructure devices having self-aligned graded contact (1992-11-10),
12. 5158896 - Method for fabricating group III-V heterostructure devices having (1992-10-27),
13. 5098857 - Method of making semi-insulating gallium arsenide by oxygen doping in (1992-03-24),
14. 5036022 - Metal organic vapor phase epitaxial growth of group III-V semiconductor (1991-07-30),

Title: Innovator Spotlight: Michael A. Tischler

Introduction

Michael A. Tischler, based in Danbury, CT, is a notable inventor with a remarkable portfolio of 14 patents. His work predominantly focuses on advancements in semiconductor technology, contributing significantly to the fields of silicon carbide and gallium nitride materials.

Latest Patents

One of Tischler's latest innovations involves the development of silicon carbide epitaxial layers grown on substrates offcut towards the <1{overscore (1)}00> crystalline direction. This patented technology allows for the creation of silicon carbide epitaxial films, which exhibit superior morphological and material properties due to their unique offcut angle ranging from about 6 to about 10 degrees.

Another significant patent details a method for forming gallium, aluminum, and indium nitride base layers on a substrate, facilitating the fabrication of microelectronic devices. This process, which utilizes vapor-phase reactions, yields high-quality, single-crystal layers with minimal defect densities. Such advancements enable the production of various microelectronic devices, including light-emitting diodes, detectors, transistors, and semiconductor lasers.

Career Highlights

Throughout his career, Tischler has made substantial contributions while working at several prestigious companies, including Advanced Technology Materials, Inc. and International Business Machines Corporation (IBM). His role in these organizations has further propelled innovation in semiconductor materials and devices.

Collaborations

Tischler has collaborated with prominent figures in the field, including Sandip Tiwari and Joan M. Redwing. These partnerships have strengthened his work in enhancing semiconductor technologies and expanding the potential applications of his inventions.

Conclusion

Michael A. Tischler stands out as a dedicated inventor whose contributions to semiconductor technology have significant implications. With 14 patents to his name, his latest innovations continue to pave the way for advancements in microelectronic devices, showcasing his commitment to progress in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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