Advanced Technology Materials, Inc.

International Business Machines Corporation

Other

Michael A Tischler

Sandip Tiwari

Jeremy H Burroughes

Steven Lorenz Wright

Mark S Milshtein

Joan M Redwing

Thomas F Kuech

George R Brandes

Allan Mark Hartstein

Peter S Kirlin

Robert P Vaudo

Thomas Francis Kuech

Duncan W Brown

Barbara E Landini

A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.

Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>

A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm.sup.-2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.

GaN-based devices using (Ga, AL, In)N base layers

Solid-phase physical sorbent medium holding adsorbed fluid is provided in a cartridge, for use in a sorbent-based fluid storage and dispensing system. One or more of such cartridges may be disposed in a fluid storage and dispensing vessel and opened prior or subsequent to sealing of the vessel, to provide desorbable fluid for dispensing from the vessel, e.g., by pressure differential, concentration differential and/or thermal desorption. Use of such cartridges thereby obviates the sorbent bake-out and sorbate gas loading steps necessary in prior practice, thereby simplifying the manufacture of the fluid storage and dispensing system.

Sorbent-based fluid storage and dispensing vessel with replaceable

Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the contacting metal, which forms a metal silicide interlayer providing the resulting contact with low specific contact resistance and high electrical and structural stability. The contact interface is formed by reaction below the semiconductor surface, and thus the in-situ silicide formation process is insensitive to surface impurities and oxides and permits the controlled formation of silicides without the formation of excess carbon and carbides at the contact interface. The silicon layer may optionally be doped in situ during growth or implanted with dopants after growth, to lower the contact resistance and enhance its operational stability.

Low resistance, stable ohmic contacts to silicon carbide, and method of

High brightness electroluminescent device emitting in the green to

A method of making a single crystal Ga*N article, including the steps of: providing a substrate of crystalline material having a surface which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention in an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.

Method of making a single crystals Ga*N article

A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H--SiC, 4H--SiC, or a-axis oriented 6H--SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.

A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H-SiC, 4H-SiC, or a-axis oriented 6H-SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.

High brightness electroluminescent device, emitting in the green to

A floating gate is inserted into the gate stack of an EEPROM cell. For an N channel EEPROM device, the floating gate is composed of a material having a conduction band edge (or fermi energy in the case of a metal or composite that includes a metal) at least one and preferably several kT electron volts below the conduction band edge of the channel region. The floating gate material thus has a larger electron affinity than the material of the channel region. This allows the insulator separating the floating gate and the channel to be made suitable thin (less than 100 angstroms) to reduce the writing voltage and to increase the number of write cycles that can be done without failure, without having charge stored on the floating gate tunnel back out to the channel region during read operations. For a P channel EEPROM device, the floating gate is composed of a material having a valence band edge (or fermi energy in the case of a metal or a composite that includes a metal) at least one and preferably several kT (eV) above the valence band edge of the channel region.

Low voltage memory

Low resistance, stable ohmic contacts to silcon carbide, and method of

A lateral injection group III-V heterostructure device having self-aligned graded contact diffusion regions of opposite conductivity types and a method of fabricating such devices are disclosed. The device includes a heterojunction formed by a higher bandgap III-V compound semiconductor formed over a lower bandgap III-V compound semiconductor. The method of the present invention allows the opposite conductivity type diffusion regions to diffuse simultaneously and penetrate the heterojunction. This results in compositional mixing of the compound semiconductor materials forming the heterojunction in the diffusion regions.

Group III-V heterostructure devices having self-aligned graded contact

Method for fabricating group III-V heterostructure devices having

A method of forming semi-insulating gallium arsenide by oxygen doping in a metal-organic vapor phase epitaxy system. The metal organic reactant gas containing aluminum and oxygen is introduced into the reaction chamber together with the gallium and arsenic containing reactant gases. A deep level oxygen impurity is incorporated into the growing gallium arsenide layer to form semi-insulating gallium arsenide.

Method of making semi-insulating gallium arsenide by oxygen doping in

This invention is directed to a method of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) of Group III-V compound semiconductors in a hot wall reactor. Epitaxy is accomplished by use of precursors having a metal, an organic ligand, and an inorganic ligand. The system is operated at very low pressures to provide a high throughput of wafers and a highly uniform deposition growth. The invention is further directed to the use of the class of precursors to selectively grow III-V compounds on a masked substrate, wherein growth occurs epitaxially on the exposed areas of the substrate but not on the surrounding mask.

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Danbury, CT, United States of America

Michael A Tischler