Mi-jin Kim

Title: Mi-jin Kim: Innovator in Semiconductor Manufacturing

Introduction

Mi-jin Kim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor manufacturing, holding 2 patents that showcase his innovative approaches.

Latest Patents

His latest patents include methods for manufacturing trench isolation structures using selective plasma ion immersion implantation and deposition (PIIID). This patent describes a process for creating semiconductor devices by forming trenches in a substrate and selectively applying PIIID to specific trenches. The technology allows for the formation of a semiconductor substrate with multiple trenches, each treated differently to enhance device performance.

Another notable patent focuses on methods of manufacturing semiconductor devices that aim to reduce hot electron induced punchthrough (HEIP) and improve device characteristics. This involves selectively forming an oxynitride layer in a device isolation layer based on the characteristics of the transistors. The process includes creating first and second trenches, applying an oxide layer, and using plasma ion immersion implantation to form a buried insulating layer.

Career Highlights

Mi-jin Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the efficiency and effectiveness of semiconductor devices.

Collaborations

He collaborates with notable colleagues such as Dong-woon Shin and Tai-Su Park, contributing to a dynamic research environment that fosters innovation.

Conclusion

Mi-jin Kim's contributions to semiconductor manufacturing through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the industry. His advancements are paving the way for future developments in semiconductor technology.