The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jun. 06, 2008
Dong-woon Shin, Gyeonggi-do, KR;
Tai-su Park, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Soo-jin Hong, Gyeonggi-do, KR;
Mi-jin Kim, Seoul, KR;
Dong-woon Shin, Gyeonggi-do, KR;
Tai-su Park, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Soo-jin Hong, Gyeonggi-do, KR;
Mi-jin Kim, Seoul, KR;
Abstract
A semiconductor device is manufactured by forming trenches in a substrate and selectively performing Plasma Ion Immersion Implantation and Deposition (PIIID) on a subset of the trenches in the substrate. The PIIID may be performed on only a portion of a surface of at least one of the trenches in the substrate. Semiconductor devices can include a semiconductor substrate having first, second and third trenches therein, and an oxide liner layer that fully lines the first trenches, that does not line the second trenches and that partially lines the third trenches.