Gyeonggi-do, South Korea

Mi-Hyoung Lee

This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mi-Hyoung Lee. Retrieved from https://idiyas.com/inventor/mi-hyoung-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Mi-Hyoung Lee: Innovator in Semiconductor Technology

Introduction

Mi-Hyoung Lee is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative approaches to electrode design.

Latest Patents

One of Mi-Hyoung Lee's notable patents is a semiconductor device that includes a carbon-containing electrode and a method for fabricating the same. This invention features an electrode with a high work function due to a carbon-containing TiN layer. The design allows for the provision of a dielectric layer with high permittivity, which effectively reduces leakage current. Additionally, the use of an electrode with a high work function ensures sufficient capacitance in capacitors, enhancing overall device performance.

Career Highlights

Mi-Hyoung Lee is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work at Hynix has positioned him as a key player in advancing semiconductor technologies.

Collaborations

Some of his coworkers include Kwan-Woo Do and Kee-Jeung Lee, who collaborate with him on various projects within the semiconductor field.

Conclusion

Mi-Hyoung Lee's contributions to semiconductor technology, particularly through his innovative patent, highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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