The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Dec. 29, 2009
Kwan-woo DO, Gyeonggi-do, KR;
Kee-jeung Lee, Gyeonggi-do, KR;
Young-dae Kim, Gyeonggi-do, KR;
Mi-hyoung Lee, Gyeonggi-do, KR;
Jeong-yeop Lee, Gyeonggi-do, KR;
Kwan-Woo Do, Gyeonggi-do, KR;
Kee-Jeung Lee, Gyeonggi-do, KR;
Young-Dae Kim, Gyeonggi-do, KR;
Mi-Hyoung Lee, Gyeonggi-do, KR;
Jeong-Yeop Lee, Gyeonggi-do, KR;
Hynix Semiconductor, Inc., Gyeonggi-do, KR;
Abstract
In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.