Gyeonggi-do, South Korea

Mi Hye Jun

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: The Innovations of Mi Hye Jun

Introduction

Mi Hye Jun is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology. His work focuses on high voltage semiconductor devices, which are crucial for various electronic applications.

Latest Patents

Mi Hye Jun holds 1 patent for a high voltage semiconductor device. This innovative device features a gate electrode structure on a substrate, a source region adjacent to one side of the gate, a first drift region on the opposite side, and a drain region connected to the first drift region. The design also includes a device isolation region positioned next to the drain region, with the first drift region strategically spaced apart from the isolation region.

Career Highlights

Mi Hye Jun is currently employed at Db Hitek Co., Ltd., where he continues to advance his research and development in semiconductor technologies. His expertise in high voltage devices has positioned him as a valuable asset in the industry.

Collaborations

Some of his coworkers include Kee Joon Choi and Bum Seok Kim, who contribute to the innovative environment at Db Hitek Co., Ltd.

Conclusion

Mi Hye Jun's work in high voltage semiconductor devices exemplifies the importance of innovation in technology. His contributions are paving the way for advancements in electronic applications.

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