Db Hitek Co., Ltd.

Mi Hye Jun

Hae Taek Kim

Bum Seok Kim

Kee Joon Choi

Duk Joo Woo

Bon Sug Koo

A high voltage semiconductor device includes a gate electrode structure disposed on a substrate, a source region disposed in the substrate to be adjacent to one side of the gate electrode structure, a first drift region disposed in the substrate to be adjacent to another side of the gate electrode structure, a drain region electrically connected with the first drift region, and a device isolation region disposed on one side of the drain region. Particularly, the first drift region is spaced apart from the device isolation region.

Growing community of inventors

Gyeonggi-do, South Korea

Mi Hye Jun