The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Mar. 10, 2017
Dongbu Hitek Co., Ltd., Seoul, KR;
Kee Joon Choi, Gyeonggi-do, KR;
Bum Seok Kim, Seoul, KR;
Bon Sug Koo, Gyeonggi-do, KR;
Mi Hye Jun, Gyeonggi-do, KR;
Hae Taek Kim, Gyeonggi-do, KR;
Duk Joo Woo, Gyeonggi-do, KR;
DB HITEK CO., LTD., Seoul, KR;
Abstract
A high voltage semiconductor device includes a gate electrode structure disposed on a substrate, a source region disposed in the substrate to be adjacent to one side of the gate electrode structure, a first drift region disposed in the substrate to be adjacent to another side of the gate electrode structure, a drain region electrically connected with the first drift region, and a device isolation region disposed on one side of the drain region. Particularly, the first drift region is spaced apart from the device isolation region.