Mi-hyang Lee

Title: **Innovations by Mi-hyang Lee: Pioneering Ferroelectric Memory Technologies**

Introduction

Mi-hyang Lee, a leading inventor based in Seoul, South Korea, has made significant contributions to the field of semiconductor technology. With a total of three patents to her name, she is known for her innovative work at Samsung Electronics Co., Ltd., where she focuses on developing advanced memory devices and methods for fabricating MOS transistors.

Latest Patents

Mi-hyang Lee's latest patents showcase her expertise in ferroelectric memory devices. One of her notable inventions involves integrated circuit ferroelectric memory devices that are manufactured by creating a first patterned conductive layer on an integrated circuit substrate. This design defines a lower capacitor electrode and a gate electrode, with source and drain regions formed on either side of the gate. Key features include:

- The formation of a ferroelectric layer atop the lower capacitor electrode, allowing for the creation of a ferroelectric capacitor.

- The interconnect layer that connects the top electrode and source region, along with a bit line that interfaces with the drain region.

- A robust structure featuring spaced apart word lines and strategically placed capacitors that enhance memory performance.

Additionally, Lee has developed a method for fabricating MOS transistors, which includes the controlled implantation of conductive and non-conductive impurities. This process helps to form a stable P-N junction by isolating substrate defects while ensuring optimal transistor performance.

Career Highlights

Throughout her career at Samsung Electronics Co., Ltd., Mi-hyang Lee has established herself as an influential inventor in the domain of semiconductor technologies. Her inventions have played a vital role in enhancing the efficiency and reliability of ferroelectric memory devices, contributing to advancements in various electronic applications. Her patents are a testament to her innovative spirit and technical expertise.

Collaborations

Mi-hyang Lee has collaborated with various talented individuals within her organization. Notably, she has worked alongside Chang-hyun Cho and Gwan-Hyeob Koh, both of whom are instrumental in advancing the technologies that Mi-hyang specializes in. Such collaborations have fostered a creative environment that encourages innovation and the development of groundbreaking technologies in memory and semiconductor fields.

Conclusion

Mi-hyang Lee's pioneering work in ferroelectric memory devices and related semiconductor technologies marks a significant contribution to the industry. With her innovative patents and collaborations, she continues to push the boundaries of what is possible in electronic memory solutions. Her achievements reflect not only her technical prowess but also her dedication to advancing technology for the benefit of society.