Company Filing History:
Years Active: 2015-2020
Title: The Innovative Contributions of Mesut Meterelliyoz
Introduction
Mesut Meterelliyoz is a prominent inventor based in Portland, OR, known for his significant contributions to the field of memory technology. With a total of 2 patents, he has made strides in developing advanced memory elements that enhance data retention and processing capabilities.
Latest Patents
One of his latest patents is titled "High retention time memory element with dual gate devices." This invention describes a memory element that utilizes dual gate devices to improve data retention. The design includes a write transistor with a gate connected to a write bit line and a write line, allowing for efficient data writing to a storage node. Additionally, a read transistor is incorporated to sense the value stored in the memory element, enhancing the overall functionality of the device.
Another notable patent is "DRAM with pulse sense amp." This innovation introduces a pulsed sense amplifier approach for resolving data on a bit line. The chip features a sense amplifier linked to first and second DRAM bitlines, along with a circuit designed to control the timing of data resolution. This advancement aims to improve the efficiency and speed of data processing in DRAM systems.
Career Highlights
Mesut Meterelliyoz is currently employed at Intel Corporation, a leading technology company renowned for its innovations in semiconductor manufacturing and computing solutions. His work at Intel has allowed him to contribute to cutting-edge technologies that shape the future of memory devices.
Collaborations
Throughout his career, Meterelliyoz has collaborated with talented individuals such as Rafael Rios and Gilbert W Dewey. These partnerships have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies in the field of memory systems.
Conclusion
Mesut Meterelliyoz's contributions to memory technology through his patents and work at Intel Corporation highlight his role as a key innovator in the industry. His advancements in memory elements and DRAM systems continue to influence the future of data processing and storage solutions.