This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Meng Zhang - Innovator in Memory Device Technology
Introduction
Meng Zhang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory device technology. His innovative work has led to the development of advanced memory systems that enhance performance and efficiency.
Latest Patents
Meng Zhang holds 1 patent for a memory device containing a top selective gate (TSG) deck and the method of forming the same. This patent outlines a method that includes forming a sacrificial layer over a dielectric-pair stack. The sacrificial layer contains a TSG cut structure over the dielectric-pair stack. The process also involves forming a channel plug structure, which includes a lower plug portion in the dielectric-pair stack and an upper plug portion through the sacrificial layer. Additionally, a barrier layer is formed to envelop the upper plug portion of the channel plug structure after the removal of the sacrificial layer. Finally, a semiconductor layer is formed over the dielectric-pair stack to embed the TSG cut structure, the barrier layer, and the upper plug portion of the channel plug structure.
Career Highlights
Meng Zhang is currently employed at Yangtze Memory Technologies, Ltd. His work at this company has positioned him as a key player in the development of cutting-edge memory technologies. His expertise and innovative approach have contributed to the company's advancements in the semiconductor industry.
Collaborations
Meng Zhang has collaborated with notable coworkers, including Zhangyi Li and Jing Gao. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Meng Zhang's contributions to memory device technology exemplify the spirit of innovation. His patent and work at Yangtze Memory Technologies, Ltd. highlight his commitment to advancing the field. Through collaboration and creativity, he continues to push the boundaries of what is possible in memory systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile