Hsinchu, Taiwan

Meng-Chi Wu


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Innovations of Meng-Chi Wu in Semiconductor Technology

Introduction

Meng-Chi Wu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patents. His work has had a profound impact on the performance and efficiency of semiconductor devices.

Latest Patents

One of Meng-Chi Wu's key patents is the "Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer." This invention involves a method for fabricating a buried layer of polarity equivalent to a well region, within which a drain region is formed. The buried layer is laterally aligned with respect to the well region and is separated by a portion of an epitaxial layer. This design enhances the electrical performance of the LDMOS device, showcasing Wu's innovative approach to semiconductor technology.

Career Highlights

Meng-Chi Wu is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to develop and refine his inventions, contributing to advancements in semiconductor manufacturing processes.

Collaborations

Meng-Chi Wu has collaborated with notable colleagues such as Shih-Hui Chen and Chi-Hung Kao. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Meng-Chi Wu's contributions to semiconductor technology, particularly through his patent on LDMOS devices, highlight his role as an influential inventor in the industry. His work continues to shape the future of semiconductor performance and efficiency.

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