Austin, TX, United States of America

Melissa M Brown

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Agere Systems Guardian Corp.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Melissa M Brown. Retrieved from https://idiyas.com/inventor/melissa-m-brown

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Melissa M. Brown and Her Semiconductor Invention.

Introduction

Melissa M. Brown is an inventor associated with Austin, Texas. Her patent work concerns semiconductor manufacturing, specifically the formation of trench isolation structures.

Latest Patents

Brown is credited with 1 patent: “Semiconductor Device, Trench Isolation Structure and Methods of Formations.” The invention describes forming a trench in a substrate, then treating its walls with high-pressure nitrogen annealing to reduce silicon damage caused by plasma etching. The exposed sidewalls are oxidized under elevated pressure, and the trench is filled with oxide. The process may also include high-pressure re-oxidation densification at approximately 600°C to 800°C.

Career Highlights

Brown’s listed patent is associated with Agere Systems Guardian Corp. It focuses on trench isolation fabrication methods intended to address etch-related damage and produce an oxide-filled structure.

Collaborations

Yi Ma and Scott Francis Shive are identified as Brown’s coworkers. The available information does not specify their roles in the patent or the invention.

Conclusion

Melissa M. Brown’s recorded patent highlights her contribution to semiconductor processing through a method for fabricating trench isolation structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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