The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Jun. 07, 2000
Applicant:
Inventors:
Assignee:
Agere Systems Guardian Corp., Orlando, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A trench isolation structure is fabricated using high pressure and low temperature. A substrate is provided within which a trench is formed. The trench walls are annealed in nitrogen at a pressure above atmospheric pressure to remove silicon damage caused by plasma etching. The exposed side walls of the trench are oxidized at a pressure above atmospheric pressure to form an oxidized layer. The trench is filled with an oxide. Optionally, re-oxidation densification may be performed at a pressure above atmospheric pressure and a temperature in the range of about 600° C. to about 800° C.